Title :
Formation and characterization of ferroelectric Sr2Nb2O7 thin film for MFMIS-FET type non-volatile memory
Author :
Nakao, Y. ; Sekimoto, Y. ; Matsuura, H.
Author_Institution :
Dept. of Eng. & Comput. Sci., Osaka Electro-Commun. Univ., Neyagawa, Japan
Abstract :
Ferroelectric Sr2Nb2O7 (SNO) thin films are deposited on Pt/SiO2/Si by an MOD (metal-organic decomposition) method. From X-ray diffraction, some peaks corresponding to crystalline SNO are founded, and its polarization is confirmed from a Sawyer-Tower circuit. The densities and emission rates of traps in SNO layers are investigated by DCTS (discharge-current-transient spectroscopy). Three types of traps are detected, and also the density and emission rate of each trap are determined.
Keywords :
MIS capacitors; MISFET; X-ray diffraction; decomposition; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; field effect memory circuits; field effect transistors; sputter deposition; strontium compounds; MFMIS-FET type nonvolatile memory; Pt-SiO2-Si; Pt/SiO2/Si substrate; Sawyer-Tower circuit; Sr2Nb2O7; X-ray diffraction; discharge-current-transient spectroscopy; ferroelectric Sr2Nb2O7 thin film; metal-organic decomposition; polarization; sputter deposition; trap density; trap emission rates; Crystallization; Discrete cosine transforms; Ferroelectric materials; Niobium; Polarization; Semiconductor thin films; Sputtering; Strontium; Thin film circuits; X-ray diffraction;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
Print_ISBN :
0-7803-7725-7
DOI :
10.1109/ICPADM.2003.1218361
