DocumentCode :
3565814
Title :
Silicon 3D structuring by anodization Florea ^Craciunoiu
Author :
Craciunoiu, F. ; Dinescu, Adrian ; Bragaru, A.
Author_Institution :
IMT-Bucharest, Bucharest
Volume :
1
fYear :
2008
Firstpage :
181
Lastpage :
184
Abstract :
Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
Keywords :
anodisation; diffusion; doping; electrochemistry; elemental semiconductors; etching; oxidation; p-n junctions; silicon; Si; anodization; diffusion area; doping level; electrochemical process; etching; linear graded area; oxidization; p-n junctions; porosification; Doping; Electrochemical processes; Etching; Hafnium; Impurities; Luminescence; Microelectronics; P-n junctions; Silicon; Substrates; 3D silicon structuring; anodization; p/n junctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
ISSN :
1545-827X
Print_ISBN :
978-1-4244-2004-9
Type :
conf
DOI :
10.1109/SMICND.2008.4703363
Filename :
4703363
Link To Document :
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