Title :
Silicon 3D structuring by anodization Florea ^Craciunoiu
Author :
Craciunoiu, F. ; Dinescu, Adrian ; Bragaru, A.
Author_Institution :
IMT-Bucharest, Bucharest
Abstract :
Silicon anodization is an electrochemical process, by which the silicon surface can be oxidized or etched or porosificated, depending on the process parameters. The process results are also depending on the silicon type and doping level. This work reveals the results of the anodization process for p type silicon wafers, having n type islands, with controlled junction width. By applying process techniques specific to p type silicon, it can be observed a silicon 3D structuring inside the diffusion area. So, it is marked the linear graded area specific to the p-n junctions.
Keywords :
anodisation; diffusion; doping; electrochemistry; elemental semiconductors; etching; oxidation; p-n junctions; silicon; Si; anodization; diffusion area; doping level; electrochemical process; etching; linear graded area; oxidization; p-n junctions; porosification; Doping; Electrochemical processes; Etching; Hafnium; Impurities; Luminescence; Microelectronics; P-n junctions; Silicon; Substrates; 3D silicon structuring; anodization; p/n junctions;
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Print_ISBN :
978-1-4244-2004-9
DOI :
10.1109/SMICND.2008.4703363