Title :
Comprehensive modeling of silicon microstrip detectors
Author :
Passeri, D. ; Ciampolini, P. ; Baroncini, M. ; Santocchia, A. ; Bilei, G.M. ; Checcucci, B. ; Fiandrini, E.
Author_Institution :
Perugia Univ., Italy
Abstract :
In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, DC-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced
Keywords :
semiconductor device models; silicon radiation detectors; Si; high resistivity silicon microstrip detectors; impact-generated carriers; ionizing particles; radiation tolerance studies; single-sided DC-coupled detector; transient-mode simulation; Analytical models; Conductivity; Large Hadron Collider; Microstrip; Partial differential equations; Poisson equations; Production; Radiation detectors; Semiconductor device packaging; Silicon;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.590918
