RF characterization of CMOS/GIPD flip-chip transition with on-wafer deembedding technique for scattering parameter measurements

This paper presents the complete radio-frequency (RF) characterization of flip-chip transition for complementary-metal-oxide-semiconductor (CMOS) and glass-integrated-passive-device (GIPD) substrates, with on-wafer deembedding technique of transmission line (TL) scattering parameter (S-parameter) measurements. Firstly, the off-chip calibration is done to the probe tips using the commercial impedance standard substrate (ISS) with line-reflect-match (LRM) method. Then the L-2L deembedding technique is applied for the two GIPD transmission lines to extract the RF characteristics of GIPD probe pads and transmission lines. Finally the CMOS chip mounted on the GIPD carrier is measured where the CMOS chip includes thru-reflect-line (TRL) calibration standards for resolving the flip-chip transition characteristics with the previous acquired GIPD parameters. The extracted results show less than -1.5 dB insertion loss for the flip chip transitions at 50 GHz.