Author_Institution :
Dept. of Mech. & Electro-Mech. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
For decades, wire bonding technology has been widely used to interconnect IC chip and the substrate in microelectronic package. In recent years, due to the increasing cost of gold, the copper wires started to be employed in microelectronic package instead, lowing the production cost. The additional benefits include superior performance of copper wires, in terms of electrical and thermal property. Thus, it is likely that, the gold wires will be replaced by the copper gradually in the future. However, greater hardness of the copper wire and weak mechanical strength of low-k dielectric layers lead to higher stress in the Al pad and the underlying pad structure during the thermo-sonic bonding process. An additional concerns arises, as the Al pad is squeezed out by copper ball, which may affect the development of fine pitch. Therefore, it is necessary to redesign the bonding pad, as well as adjust the bonding parameters, such as bonding pressure, ultrasonic energy and bonding time. As finite element software enables dealing with the wire bonding process by a transient nonlinear dynamic analysis, a finite element model for copper wire bonding is developed to investigate the mechanical behavior. The simulation results would focus on the dynamic stress response of wire bonding model and the plastic strain of the Al pad. In order to save computational time and reduce modeling complexity, the copper wire bonding is represented by a simplified 2-D finite element model, whereby the complete wire bonding process mechanism is treated as consisting solely of impact and ultrasonic vibration stages. The calculation of nonlinear transient structural behavior is carried out using an explicit time integration scheme. In the present study, the simulation results indicate that the stress wave would rapidly transfer from the bonding interface to the underlying pad structure when copper ball is in contact with the Al pad. With the increasing contact area, the stress wave path would shift - rom the inside bonding pad to the outside, resulting in the spread of the stress concentration.
Keywords :
aluminium; copper; finite element analysis; gold; integrated circuit interconnections; integrated circuit packaging; lead bonding; mechanical strength; plastic deformation; substrates; tape automated bonding; thermal properties; transient analysis; Al; IC chip interconnection; aluminum underlying pad; bonding interface; bonding pad; bonding pressure; bonding time; copper ball; copper wire; copper wire bonding technology; dynamic stress response; explicit time integration scheme; finite element model; gold wire; low-k dielectric layer; mechanical strength; microelectronic packaging; nonlinear transient structural behavior; plastic strain; stress concentration; stress wave; substrate; thermal property; thermosonic bonding process; transient nonlinear dynamic analysis; ultrasonic energy; ultrasonic vibration stage; wire bonding process; Acoustics; Bonding; Copper; Stress; Vibrations; Wires; Bonding pad; Low-k layer; Thermo-sonic bonding; Transient dynamic analysis; Wire bonding;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014 9th International