Current sharing model of parallel connected IGBTs during turn-on

Paralleled IGBTs have drawn much attention to increase current capability in high power applications. However, the current imbalance must be carefully concerned, which is caused by device characteristic difference and asymmetric circuit. In this paper, a current sharing model during turn-on period is proposed on the basis of parameterized IGBT model. The discrepancy of device parameters can lead to the difference of turn-on delay time, then, the influence of different device parameters on current sharing can be analyzed quantitatively according to the model. Moreover, the model can be used to predict the mismatch of current sharing, and the compensation of delay time can be obtained directly when active gate control method is applied. Finally, the model is verified by the experiments of two parallel connected IGBT modules (1200V, 300A) with a high accuracy. And the application of this model is also presented in the paper.