Low loss and low noise gate driver for SiC-MOSFET with gate boost circuit

This paper presents low-switching-loss and low-switching-noise gate driver for Silicon-Carbide (SiC) - Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) with gate boost circuit which is very simple and cost-effective. Compared to a conventional gate drive circuit, the proposed gate driver has capability of reducing the switching losses and switching time without increasing switching noise. SiC power devices have attracted huge interest as next generation power devices. Normally, switching losses and switching noise have some trade-off each other, SiC devices are expected to switch fast for low switching losses but fast switching might cause switching noise problem such as electromagnetic interferences (EMI). We have confirmed that the proposed gate driver makes it possible to drive SiC-MOSFET fast and energy efficiently without increasing switching noise and break the trade-off of switching characteristics.