Title :
Low frequency noise in boron doped poly-SiGe resistors
Author :
Kun-Ming Chen ; Guo-Wei Huang ; Jui-Feng Kuan ; Hsiang-Jen Huang ; Chun-Yen Chang ; Tsung-His Yang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
Low frequency noise in moderately and heavily boron doped poly-SiGe resistors was studied. The poly-SiGe films were grown using an ultra-high vacuum chemical molecular epitaxy system. The Ge content is in the range of 0 /spl sim/ 36%. The low frequency noise was measured at room temperature. We found that the low frequency noise in poly-SiGe was almost independent of Ge content for heavily doped samples. However, for moderately doped samples, the noise decreases with increasing Ge incorporation. This is due to the lower grain boundary barrier height for high Ge content samples. The carrier mobility fluctuation model can explain this phenomenon.
Keywords :
Ge-Si alloys; boron; carrier mobility; doping profiles; grain boundaries; heavily doped semiconductors; semiconductor device noise; semiconductor epitaxial layers; semiconductor materials; thin film resistors; Ge content; RF circuits; SiGe:B; analog circuits; carrier mobility fluctuation model; grain boundary barrier height; heavy B doping; low frequency noise; moderately doped sample; noise current spectral density; poly-SiGe:B resistors; room temperature; ultra-high vacuum chemical molecular epitaxy system; Acoustical engineering; Boron; Chemicals; Epitaxial growth; Frequency measurement; Low-frequency noise; Noise measurement; Resistors; Temperature measurement; Vacuum systems;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011641
