Title :
High-speed and temperature-insensitive operation in 1.3-µm InAs/GaAs high-density quantum dot lasers
Author :
Tanaka, Yu ; Ishida, Mitsuru ; Maeda, Yasunari ; Akiyama, Tomoyuki ; Yamamoto, Tsuyoshi ; Song, Hai-Zhi ; Yamaguchi, Masaomi ; Nakata, Yoshiaki ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki
Abstract :
Temperature-insensitive 10.3-Gb/s operation under fixed driving condition was demonstrated using directly-modulated InAs/GaAs high-density quantum dot lasers, maintaining an Ethernet mask margin of 48 % up to 100degC. 20-Gb/s direct modulation has also been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; Ethernet mask margin; direct modulation; high-density quantum dot lasers; semiconductor laser; temperature-insensitive operation; Electronics industry; Ethernet networks; Gallium arsenide; High speed optical techniques; Laser theory; Optical devices; Optical modulation; Quantum dot lasers; Semiconductor lasers; Temperature distribution; (140.5960) Semiconductor laser; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
