RF-interconnect for multi-Gb/s digital interface based on 10 GHz RF-modulation in 0.18 /spl mu/m CMOS

Author

Hyunchol Shin ; Zhiwei Xu ; Chang, M.F.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

1

fYear

2002

Firstpage

477

Abstract

Presents an RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2 V) and potentially enhanced data speed. A prototype RFI implemented in 0.18 /spl mu/m CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5 GHz RF-carrier.

Keywords

CMOS digital integrated circuits; ULSI; impedance matching; integrated circuit interconnections; integrated circuit noise; transceivers; 0.18 micron; 10 GHz; 2.2 Gbit/s; RF modulation; RF-interconnect; capacitive coupling; data speed; data transmission; dc current dissipation; impedance-matched transmission line; multi-gigabit-per-second digital interface; signal swing; signal-to-noise ratio; switching noise coupling; Baseband; Clocks; Couplings; Data communication; Impedance; Integrated circuit interconnections; Power system interconnection; Power transmission lines; Radiofrequency interference; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011659

Filename

1011659