Title :
RF-interconnect for multi-Gb/s digital interface based on 10 GHz RF-modulation in 0.18 /spl mu/m CMOS
Author :
Hyunchol Shin ; Zhiwei Xu ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Presents an RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2 V) and potentially enhanced data speed. A prototype RFI implemented in 0.18 /spl mu/m CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5 GHz RF-carrier.
Keywords :
CMOS digital integrated circuits; ULSI; impedance matching; integrated circuit interconnections; integrated circuit noise; transceivers; 0.18 micron; 10 GHz; 2.2 Gbit/s; RF modulation; RF-interconnect; capacitive coupling; data speed; data transmission; dc current dissipation; impedance-matched transmission line; multi-gigabit-per-second digital interface; signal swing; signal-to-noise ratio; switching noise coupling; Baseband; Clocks; Couplings; Data communication; Impedance; Integrated circuit interconnections; Power system interconnection; Power transmission lines; Radiofrequency interference; Transceivers;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011659
