Title :
0.25/spl mu/m pHEMT 40Gb/s E/O modulator drivers
Author :
Carroll, J.M. ; Coutant, A. ; Heins, M.S. ; Campbell, C.F. ; Reese, E.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
The development of two high voltage, 40 Gb/s E/O modulator driver ICs is described. Both were designed with a Distributed Amplifier (DA) topology utilizing a 0.25/spl mu/m GaAs pHEMT production process. The modulator drivers exhibit 6 dB of small signal gain, greater than 42 GHz of 3-dB bandwidth, and better than 6.5-V/sub pp/ output swing.
Keywords :
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; driver circuits; electro-optical modulation; gallium arsenide; optical communication equipment; power integrated circuits; 0.25 micron; 3-dB bandwidth; 40 Gbit/s; 42 GHz; 6 dB; GaAs; GaAs pHEMT production process; distributed amplifier topology; high voltage 40 Gb/s E/O modulator driver ICs; output swing; small signal gain; Bandwidth; Character generation; FETs; Integrated circuit modeling; PHEMTs; Radio frequency; Radiofrequency amplifiers; Resistors; Transmission line measurements; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011663
