Title :
An active SiGe sub-harmonic direct-conversion receiver front-end design for 5-6 GHz band applications
Author :
Svitek, R. ; Johnson, D. ; Raman, S.
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper describes a packaged SiGe RF front-end design for use in the Unlicensed National Information Infrastructure (U-NII) bands. The front-end is based on a sub-harmonic direct-conversion architecture and is composed of an LNA, I and Q /spl times/2 sub-harmonic mixers (SHMs), and an LO conditioning chain. The receiver is completely differential and is designed for operation from a 3.3 V supply. Simulated performance shows >25 dB conversion gain, 6.8 dB noise figure (cascode LNA), 0/spl deg/ I/Q phase imbalance, and 39.1 mA total current consumption. To the authors´ knowledge, this is the first 5-6 GHz SiGe active sub-harmonic direct-conversion receiver design presented in the literature.
Keywords :
Ge-Si alloys; analogue processing circuits; bipolar analogue integrated circuits; low-power electronics; microwave integrated circuits; microwave mixers; microwave receivers; 25 dB; 3.3 V; 39.1 mA; 5 to 6 GHz; 6.8 dB; I/Q phase imbalance; LNA; LO conditioning chain; SiGe; SiGe HBT technology; Unlicensed National Information Infrastructure bands; active SiGe sub-harmonic direct-conversion receiver front-end design; cascode LNA; conversion gain; differential receiver; packaged SiGe RF front-end design; simulated performance; sub-harmonic mixers; total current consumption; Bandwidth; Business; Circuit topology; Filters; Germanium silicon alloys; Noise figure; Performance gain; Radio frequency; Semiconductor device packaging; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011667
