Title :
High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs
Author :
Hsien-Chin Chiu ; Ming-Jyh Hwu ; Shih-Cheng Yang ; Yi-Jen Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
A novel low-k BCB (benzocyclobutene) bridged and passivated process for AlGaAs/InGaAs doped-channel power FETs with high reliability and linearity was characterized and developed. In this study, we applied the low-k BCB-bridged interlayer to replace the conventional air-bridged process and the SiN/sub x/ passivation technology of the 1 mm-wide power device fabrication. This novel process technique demonstrates a lower power gain degradation under a high input power swing, and exhibits an improved adjacent channel power ratio (ACPR) than the air-bridged ones due to its lower gate leakage current. The power gain degradation ratio of BCB-bridged devices under a high input power operation (P/sub in/ = 5/spl sim/10 dBm) is 0.51 dB/dBm, and this value is 0.65 dB/dBm of conventional air-bridged devices.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; dielectric thin films; gallium arsenide; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; organic compounds; passivation; power field effect transistors; AlGaAs-InGaAs; AlGaAs/InGaAs doped-channel power FETs; adjacent channel power ratio; benzocyclobutene; gate leakage current; high input power operation; high input power swing; high linearity; high reliability; low-k BCB bridged passivated process; low-k BCB-bridged interlayer; microwave on-wafer S-parameters; microwave power performance; power gain degradation ratio; wireless communication; Degradation; FETs; Fabrication; HEMTs; Indium gallium arsenide; Leakage current; Linearity; MODFETs; Passivation; Silicon compounds;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011671
