DocumentCode :
3567028
Title :
A low-dark-current InGaAs photodetector made on metamorphic InGaP buffered GaAs substrate
Author :
Lin, Chi-Kuan ; Kuo, Hao-Chung ; Lin, Gong-Ru ; Feng, M.
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
5
fYear :
2005
Abstract :
A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51-11 W/Hz0.5, and 7.5 GHz, respectively.
Keywords :
gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; GaAs; In0.53Ga0.47As; In0.53Ga0.47As p-i-n photodiode; InxGa1-xP; low-dark-current InGaAs photodetector; metamorphic InGaP buffered GaAs substrate; Buffer layers; Dark current; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; Photodetectors; Photodiodes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
Type :
conf
DOI :
10.1109/OFC.2005.193150
Filename :
1499743
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3567028
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