Title :
Development of medium voltage solid-state fault isolation devices for ultra-fast protection of distribution systems
Author :
Chang Peng ; Xiaoqing Song ; Rezaei, Mohammad Ali ; Xing Huang ; Widener, Chris ; Huang, Alex Q. ; Steurer, Michael
Abstract :
Three generations of medium voltage fault isolation devices (FID) for a power electronics based distribution system, the FREEDM System, are reported in this paper. In the Gen-I FID, three 6.5 kV silicon IGBTs are series connected to achieve 15 kV class distribution voltage blocking capability. Whereas in the Gen-II and the Gen-III FIDs, 15 kV Silicon Carbide (SiC) ETO devices are used. Since one single such device can meet the voltage withstand requirement, the operation losses as well as dimensions are significantly reduced. Future improvements in the Gen-III FID include the use of hybrid schemes and the development of symmetrical blocking high voltage SiC devices to further minimize the operation losses.
Keywords :
insulated gate bipolar transistors; power distribution protection; power semiconductor devices; silicon compounds; thyristor applications; wide band gap semiconductors; ETO device; SiC; distribution system ultrafast protection; distribution voltage blocking capability; emitter turn-off thyristor; medium voltage fault isolation device; operation loss; power electronics; silicon IGBT; solid-state fault isolation device; voltage 15 kV; voltage 6.5 kV; Insulated gate bipolar transistors; Interrupters; Semiconductor diodes; Silicon; Silicon carbide; Switches; Switching circuits; Emitter turn off thyristor; SiC device; distribution system protection; fault isolation device; hybrid circuit breaker; solid state circuit breaker;
Conference_Titel :
Industrial Electronics Society, IECON 2014 - 40th Annual Conference of the IEEE
DOI :
10.1109/IECON.2014.7049287
