Title :
Impacts of UV cure for reliable porous PECVD SiOC integration [IC interconnect applications]
Author :
Yoneda, K. ; Kato, Masaaki ; Kondo, Satoshi ; Kobayashi, Nao ; Matsuki, N. ; Matsushita, K. ; Ohara, N. ; Fukazawa, A. ; Kimura, T.
Author_Institution :
Semicond. Leading Edge Technol., Inc., Ibaraki, Japan
Abstract :
An ultra violet (UV) cure was investigated to improve the mechanical and electrical properties of porous carbon-doped PECVD (plasma enhanced chemical vapor deposition) oxide film (k<2.4) for the 45 nm node technology and beyond. Drastic improvement in the film modulus and leakage current between Cu interconnects was observed. The formation of Si-O chemical bonds by breaking Si-CH3 bonds after UV irradiation is thought to be an origin for the results of Si-O-C-H networks in p-SIOC films.
Keywords :
curing; dielectric thin films; integrated circuit interconnections; leakage currents; plasma CVD coatings; porous materials; silicon compounds; ultraviolet radiation effects; 45 nm; PECVD oxide film; SiOC-Cu; UV cure; UV irradiation; damascene fabrication; film modulus; interconnect leakage current; porous PECVD integration reliability; porous films; ultra violet curing; Chemical technology; Degradation; Fabrication; Lead compounds; Leakage current; Mechanical factors; Plasma properties; Semiconductor device reliability; Temperature; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499989
