Impacts of UV cure for reliable porous PECVD SiOC integration [IC interconnect applications]

Author

Yoneda, K. ; Kato, Masaaki ; Kondo, Satoshi ; Kobayashi, Nao ; Matsuki, N. ; Matsushita, K. ; Ohara, N. ; Fukazawa, A. ; Kimura, T.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki, Japan

fYear

2005

Firstpage

220

Lastpage

222

Abstract

An ultra violet (UV) cure was investigated to improve the mechanical and electrical properties of porous carbon-doped PECVD (plasma enhanced chemical vapor deposition) oxide film (k<2.4) for the 45 nm node technology and beyond. Drastic improvement in the film modulus and leakage current between Cu interconnects was observed. The formation of Si-O chemical bonds by breaking Si-CH₃ bonds after UV irradiation is thought to be an origin for the results of Si-O-C-H networks in p-SIOC films.

Keywords

curing; dielectric thin films; integrated circuit interconnections; leakage currents; plasma CVD coatings; porous materials; silicon compounds; ultraviolet radiation effects; 45 nm; PECVD oxide film; SiOC-Cu; UV cure; UV irradiation; damascene fabrication; film modulus; interconnect leakage current; porous PECVD integration reliability; porous films; ultra violet curing; Chemical technology; Degradation; Fabrication; Lead compounds; Leakage current; Mechanical factors; Plasma properties; Semiconductor device reliability; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499989

Filename

1499989