DocumentCode
3567724
Title
Contents
fYear
2014
Abstract
The following topics are dealt with: nanoprobing EBAC technique; NBTI; GaN HEMTs; HfO2/InGaAs metal-oxide-semiconductor systems; resistive random access memory; nLDMOS transistors; CMOS power amplifiers; power VDMOS transistors; and reliability of 3D IC.
Keywords
CMOS integrated circuits; III-V semiconductors; high electron mobility transistors; integrated circuit reliability; negative bias temperature instability; power MOSFET; power amplifiers; semiconductor device reliability; three-dimensional integrated circuits; wide band gap semiconductors; 3D IC reliability; CMOS power amplifiers; EBAC technique; GaN; HEMT; HfO2; InGaAs; NBTI; metal-oxide-semiconductor systems; nLDMOS transistors; power VDMOS transistors; resistive random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN
978-1-4799-7308-8
Type
conf
DOI
10.1109/IIRW.2014.7049489
Filename
7049489
Link To Document