Abstract :
The following topics are dealt with: nanoprobing EBAC technique; NBTI; GaN HEMTs; HfO2/InGaAs metal-oxide-semiconductor systems; resistive random access memory; nLDMOS transistors; CMOS power amplifiers; power VDMOS transistors; and reliability of 3D IC.
Keywords :
CMOS integrated circuits; III-V semiconductors; high electron mobility transistors; integrated circuit reliability; negative bias temperature instability; power MOSFET; power amplifiers; semiconductor device reliability; three-dimensional integrated circuits; wide band gap semiconductors; 3D IC reliability; CMOS power amplifiers; EBAC technique; GaN; HEMT; HfO2; InGaAs; NBTI; metal-oxide-semiconductor systems; nLDMOS transistors; power VDMOS transistors; resistive random access memory;
Conference_Titel :
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN :
978-1-4799-7308-8
DOI :
10.1109/IIRW.2014.7049489
