Application of compact HCI model to prediction of process effect in 28FDSOI technology

Author

Arfaoui, W. ; Federspiel, X. ; Bravaix, A. ; Mora, P. ; Cros, A. ; Roy, D.

Author_Institution

STMicroelectron., Crolles, France

fYear

2014

Firstpage

69

Lastpage

72

Abstract

A comprehensive study of HC reliability and process change variation for submicron fully depleted Silicon On Insulator (FDSOI) MOSFET´s is presented. The different process variation within the FDSOI technology and their impact on HC degradation are examined (i.e. channel length L, Source/Drain resistance RSD, oxide thickness T_ox, lightly-doped drain LDD). In order to prove its consistence, our energy driven model recently presented will be applied to the different process changes.

Keywords

MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; 28FDSOI MOSFET technology; HC degradation; HC reliability; LDD; RSD; channel length; compact HCI model application; energy driven model; hot-carrier injections; lightly-doped drain; oxide thickness; process change variation; process effect prediction; source-drain resistance; submicron fully depleted silicon on insulator; Degradation; Human computer interaction; Logic gates; Predictive models; Reliability; Semiconductor device modeling; Stress; FDSOI technology; HC modeling; Hot-Carrier Injections (HCI); process variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International

Print_ISBN

978-1-4799-7308-8

Type

conf

DOI

10.1109/IIRW.2014.7049513

Filename

7049513