Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests

Author

Dammann, M. ; Baeumler, M. ; Anto, R. ; Konstanzer, H. ; Bruckner, P. ; Polyakov, V. ; Wespel, M. ; Muller, S. ; Schwantuschke, D. ; Maroldt, S. ; Quay, R. ; Mikulla, M. ; Ambacher, O.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2014

Firstpage

115

Lastpage

118

Abstract

The reliability of AlGaN/GaN HEMTs with a gate length of 100 nm suitable for applications up to W-band frequencies has been investigated by on- and off-state DC-stress tests. The extrapolated life time measured using the constant current stress test exceeds 10⁵ h at a base plate temperature of 125°C. Very promising reliability results have also been found for the current step-stress tests even at the highest stress level of a DC power density of 12 W/mm. During off-state step-stress test the drain current exceeds the gate current indicating the onset of a buffer leakage current at drain voltages above the operation voltage.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; stress effects; wide band gap semiconductors; AlGaN-GaN; DC stress tests; HEMT reliability; W-band frequency; buffer leakage current; drain voltage; size 100 nm; temperature 125 C; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Reliability; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International

Print_ISBN

978-1-4799-7308-8

Type

conf

DOI

10.1109/IIRW.2014.7049524

Filename

7049524