Title :
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
Author :
Dammann, M. ; Baeumler, M. ; Anto, R. ; Konstanzer, H. ; Bruckner, P. ; Polyakov, V. ; Wespel, M. ; Muller, S. ; Schwantuschke, D. ; Maroldt, S. ; Quay, R. ; Mikulla, M. ; Ambacher, O.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
The reliability of AlGaN/GaN HEMTs with a gate length of 100 nm suitable for applications up to W-band frequencies has been investigated by on- and off-state DC-stress tests. The extrapolated life time measured using the constant current stress test exceeds 105 h at a base plate temperature of 125°C. Very promising reliability results have also been found for the current step-stress tests even at the highest stress level of a DC power density of 12 W/mm. During off-state step-stress test the drain current exceeds the gate current indicating the onset of a buffer leakage current at drain voltages above the operation voltage.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; stress effects; wide band gap semiconductors; AlGaN-GaN; DC stress tests; HEMT reliability; W-band frequency; buffer leakage current; drain voltage; size 100 nm; temperature 125 C; Gallium nitride; HEMTs; Leakage currents; Logic gates; MODFETs; Reliability; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN :
978-1-4799-7308-8
DOI :
10.1109/IIRW.2014.7049524
