DocumentCode
3567760
Title
Plasma process inducing gate oxide breakdown in the FDSOI technology
Author
Akbal, M. ; Ribes, G. ; Arfaoui, W. ; Vallier, L.
Author_Institution
STMicroelectron., Crolles, France
fYear
2014
Firstpage
119
Lastpage
122
Abstract
In this work we investigated the plasma induced damage on the Fully Depleted SOI devices by attaching different antennas configurations to the gate and source/drain nodes. We find that some configuration induces gate dielectric breakdown by charging effect. To explain these results a circuit model was performed. The model simulations are compared to the experimental results and then the impact of the charging damage from plasma process on the FDSOI technology is described.
Keywords
MIS devices; antennas; electric breakdown; plasma applications; semiconductor device models; silicon-on-insulator; FDSOI technology; Si; antennas configurations; charging damage; charging effect; circuit model; fully depleted SOI devices; gate dielectric breakdown; gate oxide breakdown; plasma induced damage; plasma process; source-drain nodes; Antennas; Integrated circuit modeling; Logic gates; MOS devices; Mathematical model; Plasmas; Stress; FDSOI devices; Gate leakage current; plasma induced damage; plasma process;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN
978-1-4799-7308-8
Type
conf
DOI
10.1109/IIRW.2014.7049525
Filename
7049525
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