• DocumentCode
    3567764
  • Title

    Investigation of NBTI degradation on power VDMOS transistors under magnetic field

  • Author

    Tahi, Hakim ; Benmessai, Karim ; Le Floch, Jean Michel ; Boubaaya, Mohamed ; Tahanout, Cherifa ; Djezzar, Boualem ; Benabdelmomene, Abdelmadjid ; Goudjil, Mohamed ; Chenouf, Amel

  • fYear
    2014
  • Firstpage
    139
  • Lastpage
    142
  • Abstract
    In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor (VDMOS). We show that both interface (ΔNit) and oxide trap (ΔNot) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high. In addition, the recovery of NBTI induced threshold voltage shift (ΔVth) is relatively important with applied magnetic field.
  • Keywords
    magnetic fields; negative bias temperature instability; power MOSFET; semiconductor device reliability; NBTI degradation; NBTI stress; magnetic field; negative bias temperature instability; oxide trap; power VDMOS transistors; power double diffused MOS transistor; threshold voltage shift; Current measurement; Degradation; Magnetic fields; Stress; Stress measurement; Temperature measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
  • Print_ISBN
    978-1-4799-7308-8
  • Type

    conf

  • DOI
    10.1109/IIRW.2014.7049530
  • Filename
    7049530
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3567764