DocumentCode
3567778
Title
RRAM reliability discussion group summary
Author
Veksler, D.
fYear
2014
Firstpage
169
Lastpage
169
Abstract
Operating principles and physical mechanisms, variability and reliability of resistive random access memory (RRAM), limiting factors and future trends in RRAM technology were discussed in the group. Flash memory, the primary type of nonvolatile memory in use today, has a number of problems with die scaling and with an increase of the memory capacity. RRAM is a disruptive technology solution, which promises implementation of extremely dense bit-arrays. It is also promising for the development of 3d memory arrays. Comparing to another high density memory technology, such as 3d NAND, all layers of a 3d RRAM chip may form independent arrays, simplifying chip design and fabrication process flow.
Keywords
Dielectrics; Electric breakdown; Reliability; Switches; Three-dimensional displays; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
Print_ISBN
978-1-4799-7308-8
Type
conf
DOI
10.1109/IIRW.2014.7049544
Filename
7049544
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