• DocumentCode
    3567778
  • Title

    RRAM reliability discussion group summary

  • Author

    Veksler, D.

  • fYear
    2014
  • Firstpage
    169
  • Lastpage
    169
  • Abstract
    Operating principles and physical mechanisms, variability and reliability of resistive random access memory (RRAM), limiting factors and future trends in RRAM technology were discussed in the group. Flash memory, the primary type of nonvolatile memory in use today, has a number of problems with die scaling and with an increase of the memory capacity. RRAM is a disruptive technology solution, which promises implementation of extremely dense bit-arrays. It is also promising for the development of 3d memory arrays. Comparing to another high density memory technology, such as 3d NAND, all layers of a 3d RRAM chip may form independent arrays, simplifying chip design and fabrication process flow.
  • Keywords
    Dielectrics; Electric breakdown; Reliability; Switches; Three-dimensional displays; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International
  • Print_ISBN
    978-1-4799-7308-8
  • Type

    conf

  • DOI
    10.1109/IIRW.2014.7049544
  • Filename
    7049544