Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic Regimes

Author

Elthakeb, Ahmed T. ; Abd Elhamid, Hamdy ; Ismail, Yehea

Author_Institution

Center of Nanoelectron. & Devices, American Univ. in Cairo, Cairo, Egypt

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1796

Lastpage

1802

Abstract

Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at L_G=9.7 nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.

Keywords

MOSFET; Monte Carlo methods; critical points; electron accelerators; semiconductor device models; ITRS-2013; International Technology Roadmap of Semiconductors; TG-FinFET scaling; backward electron velocity components; ballisticity ratio; critical points; electron acceleration; electron transport; forward electron velocity components; nanoscale trigate FinFET; quantum corrected 3D Monte Carlo technique; quasiballistic regimes; velocity profile; Acceleration; FinFETs; Logic gates; Performance evaluation; Scattering; Solid modeling; 3-D Monte Carlo (MC) technique; ballisticity ratio (BR); forward/backward electron velocities; trigate (TG) FinFET; trigate (TG) FinFET.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2420580

Filename

7090982