Title :
High charge effects in silicon drift detectors with lateral confinement of electrons
Author :
Castoldi, Andrea ; Rehak, Pavel
Author_Institution :
Dipartimento di Fisica, Milan Univ., Italy
Abstract :
A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2·105 electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained
Keywords :
electromigration; silicon radiation detectors; Si; Si drift detectors; electron cloud; electrostatic repulsion; high charge effects; lateral electron diffusion; signal charge; Anodes; Clouds; Detectors; Electrons; Implants; Impurities; Production; Prototypes; Silicon; Testing;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Print_ISBN :
0-7803-3180-X
DOI :
10.1109/NSSMIC.1995.504329
