• DocumentCode
    3568814
  • Title

    High charge effects in silicon drift detectors with lateral confinement of electrons

  • Author

    Castoldi, Andrea ; Rehak, Pavel

  • Author_Institution
    Dipartimento di Fisica, Milan Univ., Italy
  • Volume
    1
  • fYear
    1995
  • Firstpage
    588
  • Abstract
    A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2·105 electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained
  • Keywords
    electromigration; silicon radiation detectors; Si; Si drift detectors; electron cloud; electrostatic repulsion; high charge effects; lateral electron diffusion; signal charge; Anodes; Clouds; Detectors; Electrons; Implants; Impurities; Production; Prototypes; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
  • Print_ISBN
    0-7803-3180-X
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1995.504329
  • Filename
    504329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3568814