Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Author

Jiongjiong Mo ; Lind, Erik ; Wernersson, Lars-Erik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

Volume

35

Issue

5

fYear

2014

fDate

May-14

Firstpage

515

Lastpage

517

Abstract

We have developed laterally asymmetric In_0.53Ga_0.47As/InP MOSFETs with different regrown contacts at the source (In_0.53Ga_0.47As) and the drain (InP). Introducing a wider bandgap material, InP, as the drain electrode, higher voltage gain g_m/g_d has been obtained with a reduced output conductance g_d and improved breakdown voltage V_bd. For L_g = 50 nm, a high oscillation frequency f_max = 300 GHz has been obtained using an InP drain. A gate-connected field-plate has been introduced, which contributes to the device saturation with better impact ionization/band-to-band tunneling immunity.

Keywords

III-V semiconductors; MOSFET; electric breakdown; electrical contacts; electrochemical electrodes; gallium arsenide; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor growth; submillimetre wave transistors; In_0.53Ga_0.47As-InP; breakdown voltage; drain electrode; frequency 300 GHz; gate-connected field-plate; impact ionization-band-to-band tunneling immunity; laterally asymmetric MOSFET; reduced output conductance; regrown contact; size 50 nm; source-drain engineering; wider bandgap material; Impact ionization; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFET; Photonic band gap; InGaAs MOSFET; oscillation frequency; oscillation frequency.; source/drain engineering; voltage gain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2308925

Filename

6767078