Impact of gate workfunction fluctuation on FinFET standard cells

Author

Meinhardt, Cristina ; Zimpeck, Alexandra L. ; Reis, Ricardo

Author_Institution

Inst. de Inf. - PPGC, Univ. Fed. do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil

fYear

2014

Firstpage

574

Lastpage

577

Abstract

FinFET technology is pointed as the main candidate to replace CMOS bulk process in sub-22nm circuits. Predictive technology and design exploration help to understand major effects of variability sources and their impact on circuit performance and power consumption. In this sense, new design methodologies and new EDA tools must be able to deal with the new fabrication process and variability challenges. This paper presents a predictive evaluation of the impact of workfunction variation in the timing and power of standard cells in FinFETs future technology nodes.

Keywords

MOSFET; electronic design automation; power consumption; work function; CMOS bulk process; EDA tools; FinFET standard cell technology; circuit performance; design exploration methodology; electronic design automation; fabrication process; gate work function fluctuation; power behavior; power consumption; predictive evaluation technology; timing behavior; variability sources effects; FinFETs; Fluctuations; Logic gates; Metals; Standards; Threshold voltage; Timing; FinFET; Standard Cell; gate work-function; power; process variability; timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7050050

Filename

7050050