• DocumentCode
    3569039
  • Title

    Modeling and characterization of the nMOS transistor stressed by hot-carrier injection

  • Author

    Bouchakour, R. ; Hardy, L. ; Naviner, J.-F. ; Limbourg, I. ; Jourdain, M. ; Jelloul, M.

  • Author_Institution
    Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
  • Volume
    1
  • fYear
    1995
  • Firstpage
    61
  • Abstract
    This paper presents the modeling and characterization of degradation effects by hot-carrier injection on the electrical behavior of the nMOS transistor. The one-dimensional analytical model developed is based on the sharing out of the channel in cells and is able to take into account a distribution of defects along the channel
  • Keywords
    MOSFET; electron traps; hot carriers; interface states; semiconductor device models; 1D analytical model; NMOSFET; characterization; degradation effects; electrical behavior; hot-carrier injection; modeling; n-channel MOSFET; nMOS transistor; one-dimensional model; Analytical models; Circuit simulation; Degradation; Electron traps; Equations; Hot carrier injection; MOSFETs; Predictive models; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
  • Print_ISBN
    0-7803-2972-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1995.504378
  • Filename
    504378
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3569039