Title :
Modeling and characterization of the nMOS transistor stressed by hot-carrier injection
Author :
Bouchakour, R. ; Hardy, L. ; Naviner, J.-F. ; Limbourg, I. ; Jourdain, M. ; Jelloul, M.
Author_Institution :
Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
This paper presents the modeling and characterization of degradation effects by hot-carrier injection on the electrical behavior of the nMOS transistor. The one-dimensional analytical model developed is based on the sharing out of the channel in cells and is able to take into account a distribution of defects along the channel
Keywords :
MOSFET; electron traps; hot carriers; interface states; semiconductor device models; 1D analytical model; NMOSFET; characterization; degradation effects; electrical behavior; hot-carrier injection; modeling; n-channel MOSFET; nMOS transistor; one-dimensional model; Analytical models; Circuit simulation; Degradation; Electron traps; Equations; Hot carrier injection; MOSFETs; Predictive models; Transistors; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
Print_ISBN :
0-7803-2972-4
DOI :
10.1109/MWSCAS.1995.504378
