A zinc dioxide-on-silicon MEMS resonator for narrowband filtering

Author

Ossama, Mortada ; Pierre, Blondy ; Aurelian, Crunteanu ; Matthieu, Chatras ; Orlianges, Jean-Christophe

Author_Institution

Micro & Nanotechnol. for Optoelectron. & Microwave Components (MINACOM) Dept., Univ. of Limoges, Limoges, France

fYear

2014

Firstpage

586

Lastpage

589

Abstract

This paper presents a thin-film piezoelectric-on-substrate (TPoS) micro-resonator with a resonant frequency around 770MHz. This high frequency operation has been enabled through reducing inter-electrode gap. After optimization of geometrical design and fabrication process, resonators was measured showing an electromechanical coupling coefficient k_t² of 2.2%, a high quality factor Q_m of 1460 and a low motional resistance (R_m ≈ 21 Ω). Experimental data have shown good agreement with theoretical computations.

Keywords

Q-factor; coupled circuits; crystal resonators; filtering theory; micromechanical resonators; substrates; thin film devices; zinc compounds; MEMS resonator; TPoS microresonator; electromechanical coupling coefficient; fabrication process; frequency 770 MHz; interelectrode gap reduction; microelectromechanical system; narrowband filtering; quality factor; resonant frequency; thin-film piezoelectric-on-substrate; zinc dioxide-on-silicon; Acoustics; Electrodes; Microwave filters; Resonant frequency; Resonator filters; Silicon; Zinc oxide; Microresonator; piezoelectric; zinc dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7050053

Filename

7050053