DocumentCode :
3569224
Title :
Analyzing the electromigration effects on different metal layers and different wire lengths
Author :
Posser, Gracieli ; Mishra, Vivek ; Reis, Ricardo ; Sapatnekar, Sachin S.
Author_Institution :
Inst. de Inf. - PPGC/PGMicro, Univ. Fed. do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
fYear :
2014
Firstpage :
682
Lastpage :
685
Abstract :
Electromigration (EM) is a significant problem in integrated circuits and can seriously damage interconnect wires and vias, reducing the circuit´s lifetime. In this paper we are simulating the EM effects on 6 different metal layers for different wire lengths incorporating Joule heating effects. The layouts are constructed considering the 45nm technology and scaled to 22nm technology. We are simulating the EM effects considering three different wire lengths, 100μm, 200μm and 300μm in 22nm technology for a reference frequency of 2GHz. The delay is also analyzed and it increases when the wire length increases and decreases for a higher metal layer.
Keywords :
circuit simulation; electromigration; heating; integrated circuit interconnections; vias; wires (electric); EM effects; Joule heating effects; circuit lifetime reduction; delay analysis; electromigration effects; frequency 2 GHz; integrated circuit layouts; interconnect wires; metal layers; size 100 mum; size 200 mum; size 22 nm; size 300 mum; size 45 nm; vias; wire length; Delays; Electromigration; Heating; Integrated circuit interconnections; Layout; Metals; Wires; AC Electromigration; Electromigration; Physical Design; Signal Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on
Type :
conf
DOI :
10.1109/ICECS.2014.7050077
Filename :
7050077
Link To Document :
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