Variability of nanoscale triple gate FinFETs: Prediction and analysis method

Author

Tassis, D. ; Messaris, I. ; Fasarakis, N. ; Tsormpatzoglou, A. ; Nikolaidis, S. ; Dimitriadis, C.

Author_Institution

Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2014

Firstpage

710

Lastpage

713

Abstract

Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.

Keywords

MOSFET; nanoelectronics; semiconductor device models; Verilog-A; analytical compact drain current model; electrical characteristics variability prediction; lightly doped nanoscale FinFET; nanoscale triple gate FinFET; undoped nanoscale FinFET; Analytical models; Computational modeling; FinFETs; Integrated circuit modeling; Inverters; Logic gates; Threshold voltage; Compact model; FinFET; variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems (ICECS), 2014 21st IEEE International Conference on

Type

conf

DOI

10.1109/ICECS.2014.7050084

Filename

7050084

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3569237