Title :
10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
Author :
Honjo, H. ; Sato, H. ; Ikeda, S. ; Sato, S. ; Watanebe, T. ; Miura, S. ; Nasuno, T. ; Noguchi, Y. ; Yasuhira, M. ; Tanigawa, T. ; Koike, H. ; Muraguchi, M. ; Niwa, M. ; Ito, K. ; Ohno, H. ; Endoh, T.
Author_Institution :
Center for Innovative Integrated Electron. Syst., Tohoku Univ., Sendai, Japan
Abstract :
We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing which is a requisite building block for realization of high density spin transfer torque magnetic random access memory (STT-MRAM) in reduced dimensions.
Keywords :
MRAM devices; boron; cobalt compounds; iron compounds; magnesium compounds; magnetic annealing; magnetic tunnelling; B; CMOS BEOL process; Co-Pt; CoFeB-MgO; STT-MRAM; annealing; diffusion control; perpendicular-anisotropy magnetic tunnel junction stack; size 10 nm; spin transfer torque magnetic random access memory; synthetic ferrimagnetic; temperature 400 C; temperature 420 C; thermal tolerance; Annealing; Boron; Electrodes; Magnetic fields; Magnetic tunneling; Switches; Tunneling magnetoresistance; MRAM; MTJ;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
DOI :
10.1109/VLSIT.2015.7223661
