Title :
Performance of RFMOS/sup TM/ for 1.9 GHz CDMA operation
Author :
Brauchler, F. ; Tutt, M. ; Seymour, D. ; Khatibzadeh, A. ; Erdljac, J. ; Arch, J.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report the first measured ACPR properties of Texas Instruments´ RFMOS/sup TM/ power transistor technology at 1.9 GHz. It demonstrated a 49% PAE with ACPR=-45 dBc for V/sub DS/=3.6 V. The performance results are presented as a function of bias and tuning and demonstrate that the RFMOS/sup TM/ technology has excellent potential for CDMA applications.
Keywords :
UHF field effect transistors; code division multiple access; mobile radio; power MOSFET; 1.9 GHz; 3.6 V; 49 percent; CDMA; RFMOS power transistor; Texas Instruments; adjacent channel power ratio; bias; mobile digital wireless communications; power added efficiency; tuning; Bandwidth; CMOS technology; Instruments; Intrusion detection; Linearity; Multiaccess communication; Power amplifiers; Power generation; Power measurement; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705030
