• DocumentCode
    3569641
  • Title

    AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction

  • Author

    Ma, J. ; Zhang, W. ; Zhang, J.F. ; Ji, Z. ; Benbakhti, B. ; Franco, J. ; Mitard, J. ; Witters, L. ; Collaert, N. ; Groeseneken, G.

  • Author_Institution
    Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
  • fYear
    2015
  • Abstract
    For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.
  • Keywords
    Ge-Si alloys; MOSFET; negative bias temperature instability; semiconductor device measurement; AC NBTI; DC stress method; GeO2-Ge; Si-Ge; pMOSFET; Delays; Discharges (electric); Energy states; Silicon; Stress; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223692
  • Filename
    7223692
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3569641