Title :
AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction
Author :
Ma, J. ; Zhang, W. ; Zhang, J.F. ; Ji, Z. ; Benbakhti, B. ; Franco, J. ; Mitard, J. ; Witters, L. ; Collaert, N. ; Groeseneken, G.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
Abstract :
For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.
Keywords :
Ge-Si alloys; MOSFET; negative bias temperature instability; semiconductor device measurement; AC NBTI; DC stress method; GeO2-Ge; Si-Ge; pMOSFET; Delays; Discharges (electric); Energy states; Silicon; Stress; Stress measurement;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
DOI :
10.1109/VLSIT.2015.7223692
