DocumentCode :
3569645
Title :
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Author :
Ji, Z. ; Zhang, J.F. ; Lin, L. ; Duan, M. ; Zhang, W. ; Zhang, X. ; Gao, R. ; Kaczer, B. ; Franco, J. ; Schram, T. ; Horiguchi, N. ; De Gendt, S. ; Groeseneken, G.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
fYear :
2015
Abstract :
For the first time, we demonstrate that A-G model extracted from short Vg-accelerated stresses can predict both long term DC and AC NBTI under low and dynamic operation Vg. This is achieved by successfully separating non-saturating defects from the saturating ones, allowing reliable extraction of power exponents needed for long term prediction. Unlike R-D model, A-G model does not require solving differential equations for AC NBTI. This saves computation time significantly, especially for high-frequency that needs small time-step, and makes it readily implementable in SPICE-like simulators.
Keywords :
negative bias temperature instability; A-G model; NBTI; power exponents; Data models; Discharges (electric); Fitting; Kinetic theory; Predictive models; Stress; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
ISSN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2015.7223693
Filename :
7223693
Link To Document :
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