DocumentCode
3570000
Title
Modeling of current lag in GaAs IC´s
Author
Curtice, W.R. ; Bennett, J.R. ; Suda, D. ; Syrett, B.A.
Author_Institution
W.R. Curtice Consulting, Princeton Junction, NJ, USA
Volume
2
fYear
1998
Firstpage
603
Abstract
Leakage currents, thermal effects and deep-level traps cause significant current lag effects in GaAs MESFETs. A conventional, MESFET large-signal, equivalent-circuit model has been modified to simulate these effects and used to improve the design of GaAs digital control and RF switching circuits. Both gate lag and drain lag are simulated as well as over-shoot or under-shoot behavior.
Keywords
gallium arsenide; GaAs; GaAs ICs; GaAs MESFETs; GaAs RF switching circuits; GaAs digital circuits; current lag modelling; deep-level traps; drain lag simulation; equivalent circuit model; gate lag simulation; large-signal model; leakage currents; over-shoot behavior; thermal effects; under-shoot behavior; Circuit simulation; Circuit testing; Digital control; FETs; Gallium arsenide; Integrated circuit modeling; Leakage current; MESFETs; Telecommunications; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705065
Filename
705065
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