Synthesis of Co-doped ZnO diluted magnetic semiconductors thin films by nanocluster-beam technique at different flow rate of helium gas

Author

Xuehua Li ; Zhiwei Zhao

Author_Institution

Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China

fYear

2015

Firstpage

1

Lastpage

2

Abstract

Co-doped ZnO thin films were fabricated by nanocluster-beam technique with different flow rates of helium gas at 200, 100 and 50 sccm and its influence of different flow rates on the properties has been investigated. TEM and AFM images, XPS survey scan and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films reduced from 16 to 9.4μemu as the increase of flow rats.

Keywords

II-VI semiconductors; X-ray photoelectron spectra; atomic force microscopy; cobalt; ferromagnetic materials; magnetic particles; magnetic thin films; magnetisation; nanofabrication; nanomagnetics; nanoparticles; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; sputter deposition; transmission electron microscopy; ultraviolet spectra; wide band gap semiconductors; zinc compounds; AFM; TEM; UV absorbance spectra; XPS; ZnO:Co; cobalt-doped zinc oxide diluted magnetic semiconductors thin films; ferromagnetic materials; helium gas flow rate; nanocluster beam technique; nanoparticles; saturation magnetization; temperature 293 K to 298 K; Films; Helium; II-VI semiconductor materials; Lattices; Saturation magnetization; Scanning electron microscopy; Zinc oxide; ZnO thin film; diluted magnetic semiconductor; nanoclusters;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7223976

Filename

7223976