Title :
Noise temperature estimates for a next generation very large microwave array [HEMT LNAs]
Author_Institution :
Dept. of Phys. & Astron., Massachusetts Univ., Amherst, MA, USA
Abstract :
This paper estimates the noise temperature as a function of frequency for amplifiers covering the 1 to 10 GHz range utilizing state-of-the-art HEMT transistors operating at temperatures of 300 K, 80 K, and 20 K. The analysis includes the effect of loss and bandwidth of the input matching network.
Keywords :
HEMT integrated circuits; MMIC amplifiers; impedance matching; integrated circuit noise; microwave antenna arrays; radiotelescopes; 1 to 10 GHz; 20 to 300 K; HEMT transistors; MMIC LNA; SETI; VLA; amplifiers; bandwidth; frequency; input matching network; loss; next generation microwave array; noise temperature estimates; very large microwave array; Bandwidth; Circuit noise; Electrical resistance measurement; Gallium arsenide; HEMTs; Indium phosphide; Microwave antenna arrays; Noise generators; Noise measurement; Temperature dependence;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705081
