Title :
Highly uniform 4-inch diameter InGaAs/InP epitaxial wafer for PIN-PD application
Author :
Doi, H. ; Iguchi, Y. ; Kimura, H. ; Iwasaki, T. ; Miura, Y. ; Yokogawa, M.
Author_Institution :
Epi Solution Div., Sumitomo Electr. Industries Ltd., Hyogo, Japan
fDate :
6/24/1905 12:00:00 AM
Abstract :
InGaAs/InP epitaxial layers were grown on four-inch S-doped InP substrates using production-scale organometallic vapor-phase epitaxy (OMVPE) system. High uniformity has been obtained by optimizing the growth conditions. For example, thickness uniformity of 1.09% in InGaAs layer, 1.39% in InP layer has been obtained. Also low dark current (<0.3 nA/200 μm φ at VR=5 V) has been achieved in planar type PIN-PD device. These results will highlight the large-diameter InGaAs/InP epitaxial growth for device cost performance
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor epitaxial layers; vapour phase epitaxial growth; 4 inch; 5 V; InGaAs-InP; InGaAs/InP; PIN-PD application; dark current; device cost performance; epitaxial wafer; production-scale organometallic vapor-phase epitaxy; thickness uniformity; Costs; Dark current; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Manufacturing; Photonic band gap; Research and development; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014590
