Title :
CMOS amplifier design methodology for optimum slew rate
Author_Institution :
Dept. of Electr. Eng., Assiut Univ., Egypt
fDate :
6/24/1905 12:00:00 AM
Abstract :
This paper presents an optimum methodology for MOS amplifier design. The design method is based on a universal model of the MOSFET, valid from weak to strong inversion. A set of very simple expressions allows quick design by hand as well as an evaluation of the design in terms of power consumption or silicon area. A design of a common-source amplifier illustrates the applicability of the proposed methodology.
Keywords :
CMOS analogue integrated circuits; MOSFET; amplifiers; circuit optimisation; circuit simulation; integrated circuit design; integrated circuit modelling; semiconductor device models; CMOS amplifier design methodology; MOS amplifier design; MOSFET universal model; analog circuit design; common-source amplifier; optimum amplifier slew rate; power consumption; silicon area; strong inversion; weak inversion; Analog circuits; Bandwidth; Capacitance; Design methodology; Energy consumption; Equations; MOSFET circuits; Semiconductor device modeling; Silicon; Voltage;
Conference_Titel :
Electrotechnical Conference, 2002. MELECON 2002. 11th Mediterranean
Print_ISBN :
0-7803-7527-0
DOI :
10.1109/MELECON.2002.1014649
