Optimization of Schottky diode multiplier of millimeter wavelength range

It was shown that profile optimization of substrate doping of Schottky multiplier diode allows not only increasing significantly the capacity overlap coefficient K_CB>;4.5, but also providing the minimum value of leakage current over the range (0-10 V) of reverse biases. With the use of AFM has been shown one of the possible statistically ideal states of the epitaxial n-GaAs surface, which allows obtaining M-P contacts in millimeter range with the idealness index n <;1.1 and the series resistance R_S<;10 ohms. Minimization of parasitic parameters due to the use of air bridges allowed obtaining Schottky mixer diodes with the overlap coefficient K_Cd>; 3.3.