Getting Closer to True CMOS-Circuits in a 4 M-DRAM

NMOS-type circuits in different areas of CMOS-DRAMs are discussed and new concepts using true CMOS circuitry are presented. The second part of the paper describes a 4 Megabit DRAM, which utilizes some of the new concepts. It was fabricated in a submicron, triple poly single metal CMOS technology with a trench capacitor and a Fully Overlapping BItline Contact (FOBIC). RAS access times of 70 ns are achieved with a power consumption of 350 mW (5mW standby).