Title :
Stress induced failure analysis by stress measurements in copper dual damascene interconnects
Author :
Suzuki, T. ; Ohtsuka, S. ; Yamanoue, A. ; Hosoda, T. ; Khono, T. ; Matsuoka, Y. ; Yanai, K. ; Matsuyama, H. ; Mori, H. ; Shimizu, N. ; Nakamura, T. ; Sugatani, S. ; Shono, K. ; Yagi, H.
Author_Institution :
Akiruno Technol. Center, Fujitsu Labs. Ltd., Tokyo, Japan
fDate :
6/24/1905 12:00:00 AM
Abstract :
Stress migration behavior in Cu dual damascene interconnects is investigated in detail. It is revealed that the failure rate depends on structural parameters such as line width and via diameter. X-ray diffraction is employed to measure the thermal stress in lines and vias. The stress difference between lines and vias is found to be related to the failure rate of multi-level interconnects. An effective method to suppress the failure is also demonstrated.
Keywords :
X-ray diffraction; copper; failure analysis; integrated circuit interconnections; integrated circuit reliability; stress measurement; thermal stresses; Cu; X-ray diffraction; dual damascene interconnects; failure rate; line width; multi-level interconnects; reliability; stress induced failure analysis; stress measurements; structural parameters; thermal stress; via diameter; Artificial intelligence; Copper; Fabrication; Failure analysis; Integrated circuit interconnections; Samarium; Stress measurement; Tensile stress; Testing; Thermal stresses;
Conference_Titel :
Interconnect Technology Conference, 2002. Proceedings of the IEEE 2002 International
Print_ISBN :
0-7803-7216-6
DOI :
10.1109/IITC.2002.1014942
