Title :
The Simulation of Charge Storage in I2L Circuits
Author :
M?¼ller, R?¼diger ; Ablabmeier, Ulrich
Author_Institution :
SIEMENS AG, Research Laboratories, Munich, W.-Germany
Abstract :
A new method for simulating charge storage effects in I2L circuits with existing CAD programs will be presented. It takes into account the different current gain dependence of saturation current and transit time. Calculated results are in very good agreement to measurements.
Keywords :
Capacitance; Charge carrier density; Charge carrier processes; Circuit simulation; Delay effects; Diodes; Doping; Laboratories; Virtual private networks; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
