Title :
Combination of I2L Circuits with High Breakdown Linear Bipolar Transistors
Author :
Bergmann, G. ; Clauss, H.
Author_Institution :
AEG-TELEFUNKEN Research Institute, 7900 Ulm/Donau
Abstract :
By introducing an additional n+-flat diffusion step into the processing sequence of linear compatible I2L circuits the breakdown voltage of the linear transistors can be pushed to 60 Volts at least. The technological key parameters will be derived and experimental results are presented.
Keywords :
Avalanche breakdown; Bipolar transistor circuits; Bipolar transistors; Breakdown voltage; Delay; Discharges; Displays; Doping; Epitaxial growth; Low voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
