• DocumentCode
    3572069
  • Title

    Combination of I2L Circuits with High Breakdown Linear Bipolar Transistors

  • Author

    Bergmann, G. ; Clauss, H.

  • Author_Institution
    AEG-TELEFUNKEN Research Institute, 7900 Ulm/Donau
  • fYear
    1977
  • Firstpage
    130
  • Lastpage
    132
  • Abstract
    By introducing an additional n+-flat diffusion step into the processing sequence of linear compatible I2L circuits the breakdown voltage of the linear transistors can be pushed to 60 Volts at least. The technological key parameters will be derived and experimental results are presented.
  • Keywords
    Avalanche breakdown; Bipolar transistor circuits; Bipolar transistors; Breakdown voltage; Delay; Discharges; Displays; Doping; Epitaxial growth; Low voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
  • Print_ISBN
    380071132X
  • Type

    conf

  • Filename
    5435041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572069