Title :
Stacked-Electrode Dynamic Memory Cells in Double Polysilicon Technology
Author :
Horninger, Karlheinrich ; Meusburger, G?¼nther ; Keller, Hermann
Author_Institution :
SIEMENS AG, Hofmannstr. 51 8000 M?ƒ??nchen 70 W. Germany
Abstract :
The double polysilicon technology can be used advantageously to design memory cells with increased storage times or higher bit density. Circuits of these cells are described and experimental as well as calculated results are presented.
Keywords :
Capacitance; Circuits; Costs; Degradation; Electrodes; MOS capacitors; Random access memory; Temperature; Time measurement; Voltage;
Conference_Titel :
Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European
