Title :
Avoiding dislocations in ion-implanted silicon
Author :
Saris, F.W. ; Custer, J.S. ; Schreutelkamp, R.J. ; Liefting, R.J. ; Wijburg, R. ; Wallinga, H.
Author_Institution :
Fom Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, the Netherlands
Abstract :
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
Keywords :
Atomic measurements; Implants; Impurities; Ion implantation; Microelectronics; Physics; Rapid thermal annealing; Silicon; Thermal degradation; Thermal engineering;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
