DocumentCode
3572304
Title
Normally-off GaAs BMFET with heterojunction emitter
Author
Schweeger, G. ; Hartnagel, H.L.
Author_Institution
Institut f?ƒ??r Hochfrequenztechnik, TH Darmstadt, W-6100 Darmstadt, Germany
fYear
1992
Firstpage
409
Lastpage
412
Abstract
Further improvements to the characteristics of vertical JFET´s operated in the bipolar mode (BMFET´s) can be obtained when electrons entering the channel from the source are accelerated and holes in the channel are blocked from entering into the source. This is achieved by a heterojunction between highly doped source region and lowly doped channel. The fabrication technology is described and the DC characteristics for differnet temperatures are presented and explained.
Keywords
Acceleration; Charge carrier processes; Contacts; Doping; Electron emission; Etching; Gallium arsenide; Heterojunctions; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Print_ISBN
444894780
Type
conf
Filename
5435128
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