Normally-off GaAs BMFET with heterojunction emitter

Further improvements to the characteristics of vertical JFET´s operated in the bipolar mode (BMFET´s) can be obtained when electrons entering the channel from the source are accelerated and holes in the channel are blocked from entering into the source. This is achieved by a heterojunction between highly doped source region and lowly doped channel. The fabrication technology is described and the DC characteristics for differnet temperatures are presented and explained.