Title :
Heterojunction bipolar transistors with Si1-x Gex base
Author :
Pruijmboom, A. ; Timmering, C.E. ; van Rooij-Mulder, J.M.L. ; Gravesteijn, D.J. ; de Boer, W.B. ; Kersten, W.J. ; Slotboom, J.W. ; Vriezema, C.J. ; de Kruif, R.
Author_Institution :
Philips Research Laboratories, P.O. Box 80000, 5600JA Eindhoven, The Netherlands.
Abstract :
Mesa-isolated bipolar transistors with strained Si1-xGez-base layers, grown by molecular beam epitaxy end atmospheric pressure chemical vapour deposition, have been fabricated. Results of structural and electrical analysis of transistors with implanted emitters and with phosphorus and arsenic-doped polysilicon emitters are presented.
Keywords :
Annealing; Bipolar transistors; Chemical analysis; Doping profiles; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Pressure control; Strain control; Thermal resistance; Thickness control;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
