Title :
Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of Long Wave-length InfraRed (LWIR) detectors
Author :
Jain, S.C. ; Poortmans, J. ; Nijs, J. ; Van Mieghem, P. ; Mertens, R.P. ; Van Overstraeten, R.
Author_Institution :
IMEC, Kapeldreef 75, B 3001 Leuven, Belgium
Abstract :
We show that the effect of heavy B doping modifies considerably the valence band offsets of the layers as well as the calculated cut-off wave-lengths of LWIR detectors.
Keywords :
Charge carrier processes; Effective mass; Germanium silicon alloys; Infrared detectors; MOSFET circuits; Particle scattering; Photodetectors; Semiconductor device doping; Semiconductor process modeling; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
