• DocumentCode
    3572323
  • Title

    Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of Long Wave-length InfraRed (LWIR) detectors

  • Author

    Jain, S.C. ; Poortmans, J. ; Nijs, J. ; Van Mieghem, P. ; Mertens, R.P. ; Van Overstraeten, R.

  • Author_Institution
    IMEC, Kapeldreef 75, B 3001 Leuven, Belgium
  • fYear
    1992
  • Firstpage
    439
  • Lastpage
    442
  • Abstract
    We show that the effect of heavy B doping modifies considerably the valence band offsets of the layers as well as the calculated cut-off wave-lengths of LWIR detectors.
  • Keywords
    Charge carrier processes; Effective mass; Germanium silicon alloys; Infrared detectors; MOSFET circuits; Particle scattering; Photodetectors; Semiconductor device doping; Semiconductor process modeling; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572323