• DocumentCode
    3572331
  • Title

    Characterisation of Heterojunction Bipolar Transistors incorporating Si/Si1-xGex epitaxial double layers with n+ emitter implants

  • Author

    Robbins, D.J. ; Leong, W Y ; Glasper, J L ; Pidduck, A.J. ; Jackson, R ; Post, I R C ; Shafi, Z A ; Ashburn, P.

  • Author_Institution
    Defence Research Agency, St Andrews Road, Malvern, WR14 3PS, United Kingdom
  • fYear
    1992
  • Firstpage
    447
  • Lastpage
    450
  • Abstract
    Transistors fabricated with systematic variations in Ge fraction, base doping and junction spacer width show near-ideal electrical characteristics. Emitter implantation generates anomalous boron diffusion in the base.
  • Keywords
    Annealing; Boron; Doping; Double heterojunction bipolar transistors; Electric variables; Germanium; Heterojunction bipolar transistors; Microelectronic implants; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Print_ISBN
    444894780
  • Type

    conf

  • Filename
    5435136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3572331